Atomic Layer Deposition (ALD)

Atomic layer deposition (ALD) is a thin-film deposition technique that enables the creation of highly uniform and conformal films at the nanoscale level. ALD is based on the sequential use of self-limiting surface reactions, which makes it possible to precisely control film thickness and composition at the atomic level.

In a typical atomic layer deposition process, two or more precursor chemicals, often referred to as precursors, are introduced into a reaction chamber in a specific sequence. These precursors react with the surface of the substrate, forming a single atomic layer of the desired material. The process is repeated in cycles, allowing the growth of the thin film one atomic layer at a time. The self-limiting nature of the reactions ensures that only a single layer is deposited during each cycle, leading to excellent thickness control and uniformity.

Atomic layer deposition (ALD) is widely employed in various industries, including microelectronics, photovoltaics, and energy storage. Its ability to deposit thin films on complex, three-dimensional structures makes it an invaluable tool for advanced applications in nanotechnology and materials